Zhi Zhu, Xiaohan Xing, Qi Qi, Wenjing Shen, Hongyue Wu, Dongyi Li, Binrong Li, Jialin Liang, Xu Tang, Jun Zhao, Hongping Li*, Pengwei Huo*

Cite this article: https://doi.org/10.1016/j.cjsc.2023.100194

Publication date:

Keywords: S-scheme heterojunction; 2-Mercaptobenzothiazole; Internal electric field; Theoretical calculation; N-GO assisted

ABSTRACT

The specific type S-scheme photocatalyst CeO₂@N-GO/g-C₃N₄ was successfully constructed, and the best MBT degradation rate reached 100%, which is more than twice that of g-C₃N₄ and CeO₂. The enhanced degradation performance is related to the introduction of N-GO, accelerating the electron transfer. Unique Ce⁴⁺ → Ce³⁺ conversion property enhances the carrier utilization, which improves the photocatalytic activity. Moreover, theoretical calculation results indicate the interfacial internal electric field (IEF) is formed between CeO₂ ((200), (311) crystal planes) and g-C₃N₄ ((002) crystal planes) to enhance the delocalized ability of the charge carriers. Moreover, various analyzed means are employed to put forward in depth on MBT degradation and IEF-induced S-scheme over CeO₂@N-GO/g-C₃N₄, such as differential charge proves the electron transmission path from CeO₂ to g-C₃N₄ to significantly prolong its lifetime. The radical capture and ESR results show that •OH, •O₂⁻, and h⁺ are the active species in the S-scheme photocatalytic system.