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Mechanoluminescent (ML) materials are promising for stress sensing, anti-counterfeiting, and optical storage, where lattice defects play a central role in governing ML performance. Herein, we demonstrate a defect-engineering strategy in Na2ZnGeO4:xMn2+ by K+/Bi3+ substitution to unravel the defect-induced ML mechanism. Upon the incorporation of K+ and Bi3+, additional deeper trap levels were formed beyond the intrinsic trap levels of Na2ZnGeO4:Mn2+, which significantly enhances the carrier storage capability. The material is synthesized via solid-state reaction, during which interstitial oxygen defects facilitate the self-reduction of Mn4+ to luminescent Mn2+ centers, as verified by electron spin resonance and X-ray photoelectron spectroscopy. Thermoluminescence (TL) analysis reveals that both intrinsic and doping-induced traps serve as carrier reservoirs, from which mechanically released carriers are transferred to Mn2+ luminescent centers to produce ML. The additional deep traps introduced by K+/Bi3+ substitution enhance carrier storage and facilitate their subsequent release under mechanical stimulation, thereby accounting for the enhanced ML output. These insights highlight the fundamental role of defect engineering in tuning ML properties. These findings underscore the synergy between cation substitution and defect engineering, providing a robust strategy for designing high-performance ML materials via trap modulation.